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FYPF2010DN
FYPF2010DN
Features
* Low forward voltage drop * High frequency properties and switching speed * Guard ring for over-voltage protection
Applications
* Switched mode power supply * Freewheeling diodes * Polarity protection
12 3
TO-220F
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Maximum Average Rectified Current Maximum Forward Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature @ TC = 105C Value 100 100 20 150 -65 to +150 Units V V A A C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 2.8 Units C/W
Electrical Characteristics (per diode) TC=25 C unless otherwise noted
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current (per diode) @ rated VR Min. TC = 25 C TC = 125 C TC = 25 C TC = 125 C TC = 25 C TC = 125 C Typ. Max. 0.77 0.65 0.75 mA 0.1 20 Units V
IRM *
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
(c)2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Typical Characteristics
100
10
Forward Current, I F[A]
10
Reverse Current, IR[mA]
1
T J=125 C
o
1
0.1
TJ=75 C
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
0.01
T J=25 C
o
0.01 0.0
1E-3
0.5
1.0
1.5
20
40
60
80
100
Forward Voltage Drop, VF[V]
Reverse Voltage, VR[V]
Figure 1. Typical Forward Voltage Characteristics (per diode)
Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode)
10
1000 900 800 700 600 500 400 300 200
TJ=25 C
o
Transient Thermal Impedance [ C/W]
Juntion Capacitance, C J[pF]
o
1
100 90 80 0 20 40 60 80 100
0.1
100
1m
10m
100m
1
10
100
Reverse Voltage, VR[V]
Pulse Duration [s]
Figure 3. Typical Junction Capacitance (per diode)
Figure 4. Thermal Impedance Characteristics (per diode)
25
250
DC
20
Max. Forward Surge Current, I FSM[A]
80 100
o
Average Forward Current, IF(AV)[A]
200
15
150
10
100
5
50
0 0 20 40 60 120 140 160
0 1 10 100
Case Temperature, T C [ C]
Number of Cycles @ 60Hz
Figure 5. Forward Current Derating Curve
Figure 6. Non-Repetive Surge Current (per diode)
(c)2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Package Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A, September 2002
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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